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Dr. Atte Haapalinna is chief technical officer at Okmetic, the leading supplier of advanced silicon wafers. He has published two dozen papers on various applications of advanced silicon substrates, silicon damage characterization and silicon photodetectors. Dr. Haapalinna has been with Okmetic since 1998, holding various positions including senior vice president of products, senior vice president of customer support and senior manager of new business development. He has participated in development of C-SOI® wafers, ultra-low resistivity wafers for power devices and engineered high resistivity wafers for RF filters and devices. Dr. Haapalinna received his Ph.D. at the Helsinki University of Technology (now Aalto University), Finland.
Advanced silicon wafers can greatly improve MEMS and RF device performance and precision, and they can also effectively remove some of the burden in the front-end operations. Bonded Silicon-On-Insulator (SOI) wafers’ high degree of device layer specification flexibility and high thickness uniformity drive for improved MEMS device performance and precision, design freedom and miniaturization. The use of hermetically sealed structures enabled by Cavity SOI (C-SOI®) wafers also enable more streamlined MEMS manufacture and cost-savings. High resistivity wafers with highly efficient trap-rich layer and optional ultra-flat wafer geometries provide optimized wafer solution even for the most demanding RF filter and device requirements. They enable RF filters to reach superior performance in terms of very low second harmonics and IMD3 levels, low insertion losses and excellent Q values.
